HVPE(Hydride Vapor Phase Epitaxy):
Metal(aluminum, Al) or semiconductor(Gallium, Ga, Indium, In) reacts with
hydrochloric acid gas(HCl) and produces gas-stated gallium chloride(GaCl).
It is send to a reaction chamber and then reacts with ammonia gas(NH3) at above1000¡É.
After that, on the surface of sapphire wafer is grown nitride compound (AlN, GaN)

HVPE is much cheaper and faster deposition than current MOCVD equipment for compound semiconductor.
And it may make 10~900§­ excellent membrane.

LEADERS & GLOBAL offers flexible, configurable process tools and
leading-edge processes for the precise, controllable and repeatable engineering of micro - and nano -structures.
Using TDI¡¦s HVPE technology, Oxford Instruments can produce tools for applications such as High Brightness Light Emitting Diodes (HBLEDs), Laser Diodes and High Electron Mobility Transistors (HEMT).


  Flexible growth rates, from 1 §­/hour (for submicron layer control) to1000 §­/hour (for fast buffer layer growth)
  Low defect density (from to /cm2)

Wide range of layer thickness up to 100 §­


Cost effective templates for device manufacturing


P and N type doped materials are available


Low cost of ownership (Nometalorganics, and low usage rate for gaseous reactant materials such as HCl and NH3)


Growth of novel materials (AlGaN/GaN, InGaN/GaN, InN and AlN)


  Custom design Epitaxy
  Many templates supplied from stock
  Low to medium volume templates on 2¡¨, 3¡¨ & 4¡¨ wafers as standard
  Research and development programmed & contracts undertaken for specific client requirements