HVPE(Hydride Vapor Phase Epitaxy):
Metal(aluminum, Al) or semiconductor(Gallium, Ga, Indium, In) reacts with
hydrochloric acid gas(HCl) and produces gas-stated gallium chloride(GaCl).
It is send to a reaction chamber and then reacts with ammonia gas(NH3) at above1000¡É.
After that, on the surface of sapphire wafer is grown nitride compound (AlN, GaN)
HVPE is much cheaper and faster deposition than current MOCVD equipment for compound semiconductor.
And it may make 10~900§ excellent membrane.
LEADERS & GLOBAL offers flexible, configurable process tools and
leading-edge processes for the precise, controllable and repeatable engineering of micro - and nano -structures.
Using TDI¡¦s HVPE technology, Oxford Instruments can produce tools for applications such as High Brightness Light Emitting Diodes (HBLEDs), Laser Diodes and High Electron Mobility Transistors (HEMT).